深圳智联伟业电子科技有限公司

Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode

 Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13μH, starting Tj = 25°C
Characteristic Symbol Value Unit
KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage VD,MAX 650 V
Drain-Gate Voltage (RGS=1MΩ) VDGR 650 V
Gate-Source (GND) Voltage VGS ±30 V
Drain Current Pulsed (1) IDM 12.0 ADC
Continuous Drain Current (TC=25°C) ID 3.0 ADC
Continuous Drain Current (TC=100°C) ID 2.4 ADC
Single Pulsed Avalanche Energy (2) EAS 358 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
Total Power Dissipation
PD 75 W
Derating 0.6 W/°C
Operating Junction Temperature. TJ +160 °C
Operating Ambient Temperature. TA -25 to +85 °C
Storage Temperature Range. TSTG -55 to +150 °C
KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage VD,MAX 800 V
Drain-Gate Voltage (RGS=1MΩ) VDGR 800 V
Gate-Source (GND) Voltage VGS ±30 V
Drain Current Pulsed (1) IDM 12.0 ADC
Continuous Drain Current (TC=25°C) ID 3.0 ADC
Continuous Drain Current (TC=100°C) ID 2.1 ADC
Single Pulsed Avalanche Energy (2) EAS 95 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
Total Power Dissipation
PD 75 W
Derating 0.6 W/°C
Operating Junction Temperature. TJ +160 °C
Operating Ambient Temperature. TA -25 to +85 °C
Storage Temperature Range. TSTG -55 to +150 °C