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供应原装进口 ST品牌 STP20NM60FP
STP20NM60FP
ST（意法半导体）
TO-220F
无铅环保型
直插式
盒带编带包装
大功率
产品信息
产品介绍:
Symbol Parameter Value Unit
TO-220/D²PAK/
I²PAK/TO-247
TO-220FP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 20 20 (*) A
ID Drain Current (continuous) at TC = 100°C 12.6 12.6 (*) A
IDM () Drain Current (pulsed) 80 80 (*) A
PTOT Total Dissipation at TC = 25°C 192 45 W
Derating Factor 1.2 0.36 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
VISO Insulation Winthstand Voltage (DC) -- 2500 V
Tstg Storage Temperature -65 to 150 °C
Tj Max. Operating Junction Temperature 150 °C
TO-220/D²PAK/
I²PAK/TO-247 TO-220FP Unit
Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max. Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
650 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 μA, VGS = 0 600 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS= Max Rating, TC= 125°C
1
10
μA
μA
IGSS Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V ±100 μA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3 4 5 V
RDS(on) Static Drain-source On
Resistance
VGS = 10V, ID = 10 A 0.25 0.29 Ω
Symbol Parameter Value Unit
TO-220/D²PAK/
I²PAK/TO-247
TO-220FP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 20 20 (*) A
ID Drain Current (continuous) at TC = 100°C 12.6 12.6 (*) A
IDM () Drain Current (pulsed) 80 80 (*) A
PTOT Total Dissipation at TC = 25°C 192 45 W
Derating Factor 1.2 0.36 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
VISO Insulation Winthstand Voltage (DC) -- 2500 V
Tstg Storage Temperature -65 to 150 °C
Tj Max. Operating Junction Temperature 150 °C
TO-220/D²PAK/
I²PAK/TO-247 TO-220FP Unit
Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max. Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
650 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 μA, VGS = 0 600 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS= Max Rating, TC= 125°C
1
10
μA
μA
IGSS Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V ±100 μA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3 4 5 V
RDS(on) Static Drain-source On
Resistance
VGS = 10V, ID = 10 A 0.25 0.29 Ω